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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Mechanism of Nonvolatile Resistive Switching in ZnO/alpha-Fe2O3 Core-Shell Heterojunction Nanorod Arrays
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Mechanism of Nonvolatile Resistive Switching in ZnO/alpha-Fe2O3 Core-Shell Heterojunction Nanorod Arrays

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摘要

Nonvolatile resistive switching based (RRAM) is evolving rapidly among various other,nanoscaled-semiconductor technologies. In this article, resistive switching mechanism in a solution-route-processed ZnO/alpha-Fe2O3 core-shell n-n heterojunction nanorods (NRs) is investigated for the first time. As fabricated nanostructured,electrode shows resistive switching with compelling ON/OFF ratio at a significantly. small reverse bias voltage (-0.55 V). Moreover, this Core-shell nanorod-based resistive-switch exhibits an excellent time-retention (with relaxation constant (alpha) similar to -0.0065 even after similar to 10(3) s) and endurance (with a minute change in switching potential after 100 switching Cycles). Resistive switching in this core-shell nanorods system arises due to the tuning of band-alignment at the heterojunction interface governed by fast and reversible migration of charge/ionic species on either side of the interface under reverse-bias condition, facilitating electron tunneling across the interface as supported by experimental observations, together with highly nonlinear dependency of the drift Velocities of oxygen-vacancies on applied potential bias. Such understanding behind the, high-degree and energy-efficient nonvolatile resistive switching in ZnO/alpha-Fe2O3 core-shell NRs make them a potential candidate in engineering next-generation nanoheterostructure based RRAM devices.

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