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首页> 外文期刊>The journal of physical chemistry, A. Molecules, spectroscopy, kinetics, environment, & general theory >Preparation of TiO_2/SnO_2 Thin Films by Sol-Gel Method and Periodic B3LYP Simulations
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Preparation of TiO_2/SnO_2 Thin Films by Sol-Gel Method and Periodic B3LYP Simulations

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摘要

Titanium dioxide (TiO_2) thin films are grown by the sol-gel dip-coating technique, in conjunction with SnO_2 in the form of a heterostructure. It was found that the crystalline structure of the most internal layer (TiO_2) depends on the thermal annealing temperature and the substrate type. Films deposited on glass substrate submitted to thermal annealing until 550 °C present anatase structure, whereas films deposited on quartz substrate transform to rutile structure at much higher temperatures, close to 1000 °C, unlike powder samples where the phase transition takes place at about 780 °C. When structured as rutile, the oxide semiconductors TiO_2/SnO_2 have very close lattice parameters, making the heterostructure assembling easier. The SnO_2 and TiO_2 have their electronic properties evaluated by first-principles calculations by means of DFT/B3LYP. Taking into account the calculated band structure diagram of these materials, the TiO_2/SnO_2 heterostructure is qualitatively investigated and proposed to increase the detection efficiency as gas sensors. This efficiency can be further improved by doping the SnO_2 layer with Sb atoms. This assembly may be also useful in photoelectrocatalysis processes.

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