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Surface Oxidation and Bubble Formation of Silicon by Oxygen/Helium Glow Discharge

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To produce silicon oxide layer with bubbles, O_2 and He DC glow discharges were conducted for a p-type (100) silicon wafer. After the plasma irradiation, the depth profile of oxygen concentration and surface morphology of the samples were examined by Auger electron spectroscopy (AES) and scanning electron microscopy (SEM), respectively. In the case of O_2 plasma irradiation, the thickness of oxide layer increased with increases of negative bias voltage and substrate temperature. In the case of He plasma irradiation, the bubbles with various diameters were formed on the Si surface. The average size of bubbles increased as the increase of He ion fluence. The size ranged from 0.12 o 0.35 #mu#m. On the other hand, surface density of bubbles decreased when the ion fluence increased. After the He plasma irradiation at RT, the O_2 plasma irradiation was conducted at the temperatures of RT and 873K. The thickness of oxide layer in-creased compared to the case of only the He plasma irradiation, when the temperature was RT. In the case of 873K, the bubble was destroyed and an increase of the oxidation thickness was not large as estimated.

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