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首页> 外文期刊>Physical review, B. Condensed matter and materials physics >Optical and structural properties of InP quantum dots embedded in (AlxGa1-x)(0.51)In0.49P
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Optical and structural properties of InP quantum dots embedded in (AlxGa1-x)(0.51)In0.49P

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摘要

Within this work we present optical and structural properties of InP quantum dots embedded in (AlxGa1-x)(0.51)In0.49P barriers. Atomic force microscopy measurements show a mainly bimodal height distribution with aspect ratios (ratio of width to height) of about 10:1 and quantum dot heights of around 2 nm for the smaller quantum dot class (type A) and around 4 nm for the larger quantum dot class (type B). From ensemble-photoluminescence measurements we estimated thermal activation energies of up to 270 meV for the type-A quantum dots, resulting in a 300 times higher luminescence intensity at 200 K in comparison to our InP quantum dots in Ga0.51In0.49P at the same emission wavelength. Photon statistic measurements clearly display that InP quantum dots in (Al0.20Ga0.80)(0.51)In0.49P emit single photons up to 80 K, making them promising candidates for high-temperature single-photon emitters.

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