Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals in SiO_2 films

V. Beyer; J. von Borany

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Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals in SiO_2 films

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The elemental redistribution and Ge loss in low-energy Ge~+ implanted SiO_2 films during wet-chemical cleaning and annealing procedures are investigated. Two effects of major importance for Ge nanocrystal formation have been found. Moisture components (H_2O vapor, H~+, OH~-) penetrate into the damaged oxide during storage, wet chemical cleaning, or annealing procedures and lead to a hydrogen and oxygen enrichment in the near-surface oxide. Furthermore, atomic collisions during Ge implantation result in an oxygen excess (with respect to SiO_2 stoichiometry) underneath the Ge profile. The local net ratio of Ge and excess oxygen determines, whether the implanted Ge is incorporated into the SiO_2 network as spatially fixed GeO_2, oxidizes to mobile GeO, or remains as elemental Ge forming nanocrystals. Apart from very shallow profiles, where a drastic Ge loss is observed simply by cleaning in chemical solutions containing H_2O_2, the main Ge loss occurs during annealing. The highly mobile GeO is identified to be responsible for both, Ge redistribution or even loss, if diffusing GeO meets the SiO_2 surface and emanates into the annealing ambient. Annealing in Ar/H_2 mixtures at ≤ 900 ℃ reduces the Ge loss due to the reduction of Ge oxides. The enhanced Ge mobility (as GeO) is described as an oxygen vacancy assisted mechanism which also explains the influence of the Si/SiO_2 interface on the Ge diffusivity. Finally, the consequences of Ge redistribution and loss for Ge nanocrystal memory device fabrication are discussed.

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《Physical review, B. Condensed matter and materials physics》 |2008年第1期|014107.1-014107.13|共9页
作者
V. Beyer; J. von Borany;
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作者单位

Forschungszentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 51 01 19, D-01314 Dresden, Germany;

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正文语种英语
中图分类固体物理学;
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defects and impurities: doping; implantation; distribution; concentration; etc.; diffusion in solids;

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Elemental redistribution and Ge loss during ion-beam synthesis of Ge nanocrystals in SiO_2 films

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