Electronic excitations and metal-insulator transition in poly(3-hexylthiophene) organic field-effect transistors

N. Sai; Z. Q. Li; M. C. MartinD. N. BasovM. Di Ventra

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Electronic excitations and metal-insulator transition in poly(3-hexylthiophene) organic field-effect transistors

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We carry out a comprehensive theoretical and experimental study of charge injection in poly(3-hexylthiophene) (P3HT) to determine the most likely scenario for metal-insulator transition in this system. We calculate the optical-absorption frequencies corresponding to a polaron and a bipolaron lattice in P3HT. We also analyze the electronic excitations for three possible scenarios under which a first- or a second-order metal-insulator transition can occur in doped P3HT. These theoretical scenarios are compared with data from infrared absorption spectroscopy on P3HT thin-film field-effect transistors (FETs). Our measurements and theoretical predictions suggest that charge-induced localized states in P3HT FETs are bipolarons and that the highest doping level achieved in our experiments approaches that required for a first-order metal-insulator transition.

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《Physical review, B. Condensed matter and materials physics》 |2007年第4期|045307.1-045307.9|共9页
作者
N. Sai; Z. Q. Li; M. C. MartinD. N. BasovM. Di Ventra;
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Department of Physics, University of California, San Diego, La Jolla, California 92093, USA;

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正文语种英语
中图分类固体物理学;
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infrared and raman spectra; polymers; organic compounds (including organic semiconductors); metal-insulator transitions and other electronic transitions; polarons and electron-phonon interactions;

Electronic excitations and metal-insulator transition in poly(3-hexylthiophene) organic field-effect transistors

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