Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Li Xin; Sundaram Suresh; El Gmili YoussefAyari TahaPuybaret RenaudPatriarche GillesVoss Paul L.Salvestrini Jean PaulOugazzaden Abdallah

首页> 外文期刊>Crystal growth & design >Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

【24h】

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

机译：

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

This article reports on two-dimensional (2D) layered hexagonal BN (h-BN) grown on sapphire by metalorganic vapor phase epitaxy (MOVPE). The highly oriented lattice and hexagonal phase of the epitaxial layers were confirmed by X-ray diffraction, Raman spectrum, and cross-section scanning transmission electron microscopy. The surface of BN over a 2-in. wafer exhibits specific 2D material morphology features for different BN thicknesses, from an atomically flat surface to a honeycomb wrinkle network. The grown epitaxial layers demonstrate a large absorption coefficient (similar to 10(6) cm(-1)) above the bandgap energy of 5.87 eV with direct band transition behavior. Near-bandgap luminescence at 216.5 nm (5.73 eV) and characteristic defect band recombination-at longer wavelengths were observed by cathodoluminescence at 77 K. This wafer-scale MOVPE-grown layered h-BN with different 2D morphology and with near bandgap emission can facilitate applications such as graphene-based electronics, advanced, van der Waals heterostructures, and deep UV photonics.

著录项

来源
《Crystal growth & design》 |2016年第6期|3409-3415|共7页
作者
Li Xin; Sundaram Suresh; El Gmili YoussefAyari TahaPuybaret RenaudPatriarche GillesVoss Paul L.Salvestrini Jean PaulOugazzaden Abdallah;
展开▼
作者单位

Georgia Inst Technol, Sch Elect & Comp Engn, GT Lorraine, F-57070 Metz, France;

Univ Paris Saclay, CNRS, Lab Photon & Nanostruct, Route Nozay, F-91460 Marcoussis, France;

CNRS, Georgia Tech, UMI 2958, F-57070 Metz, France;

展开▼
收录信息
原文格式 PDF
正文语种英语
中图分类晶体学;
关键词

相似文献

外文文献
中文文献

1. Raman spectra of indium nitride thin films grown by microwavehyphen;excited metalorganic vapor phase epitaxy on (0001) sapphire substrates [J] . Hyukhyphen, Joo Kwon, Yonghyphen, applied physics letters . 1996,第7期

机译：Raman spectra of indium nitride thin films grown by microwavehyphen;excited metalorganic vapor phase epitaxy on (0001) sapphire substrates
2. Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy [J] . M. E. Twigg, D. D. Koleske, A. E. WickendenR. L. HenryS. C. Binari Applied physics letters . 2001,第26期

机译：Correlation between nucleation layer structure, dislocation density, and electrical resistivity for GaN films grown on a-plane sapphire by metalorganic vapor phase epitaxy
3. Chemical ordering in wurtzite In↓(x)Ga↓(1-x)N layers grown on (0001) sapphire by metalorganic vapor phase epitaxy [J] . P. Ruterana, G. Nouet, W. Van der Stricht Applied physics letters . 1998,第18期

机译：Chemical ordering in wurtzite In↓(x)Ga↓(1-x)N layers grown on (0001) sapphire by metalorganic vapor phase epitaxy
4. Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy [O] . Blattner, A. J., Wessels, B. W. 2002

机译：（In，mn）作为稀磁半导体薄膜的铁磁性由metalorganic Vapor Epitaxy生长

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

摘要

著录项

相似文献

相关主题

期刊订阅