Defects and carrier compensation in semi-insulating 4H-SiC substrates

N. T. Son; P. Carlsson; J. ul HassanB. MagnussonE. Janzen

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Defects and carrier compensation in semi-insulating 4H-SiC substrates

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Electron paramagnetic resonance (EPR) studies revealed that vacancies (V_c and V_(Si)), carbon vacancy-antisite pairs (V_CC_(Si)) and the divacancy (V_CV_(Si)) are common defects in high-purity semi-insulating (HPSI) 4H-SiC substrates. Their concentrations and some of their deep acceptor levels were estimated by EPR and photoexcitation EPR. The commonly observed thermal activation energies, E_a～0.8-0.9 eV, ～1.1 eV, ～ 1.25-1.3, and ～1.5 eV, as determined from the temperature dependence of the resistivity, in different types of HPSI substrates were associated to different deep acceptor levels of V_(Si), V_C, V_CC_(Si), and V_CV_(Si). The annealing behavior of these vacancy-related defects and their interaction at high temperatures (up to 1600℃) in HPSI materials were studied. Carrier compensation processes were proposed to explain the observed change of the thermal activation energy due to high temperature annealing. V_C and V_CV_(Si) were suggested to be suitable defects for controlling the SI properties whereas the incorporation of V_(Si) and V_CC_(Si) during the crystal growth or processing should be avoided for achieving stable HPSI materials.

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《Physical review, B. Condensed matter and materials physics》 |2007年第15期|155204.1-155204.8|共9页
作者
N. T. Son; P. Carlsson; J. ul HassanB. MagnussonE. Janzen;
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作者单位

Department of Physics, Chemistry and Biology, Linkoeping University, SE-581 83 Linkoeping, Sweden;

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正文语种英语
中图分类固体物理学;
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semiconductor compounds; point defects (vacancies; interstitials; color centers; etc.) and defect clusters; impurity and defect levels;

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Defects and carrier compensation in semi-insulating 4H-SiC substrates

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