First-principles calculation of p-type alloy scattering in Si1-xGex

Joyce  S; Murphy-Armando  F; Fahy  S

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First-principles calculation of p-type alloy scattering in Si1-xGex

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The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements are calculated from the energy splitting of the valence bands, which arise when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Alloy scattering within the valence bands is found to be characterized by a single scattering parameter. The hole mobility is calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation. The results are in good agreement with experiments on bulk, unstrained alloys.

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《Physical review, B. Condensed matter and materials physics》 |2007年第15期|5201-1-5201-5-0|共5页
作者
Joyce S; Murphy-Armando F; Fahy S;
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作者单位

Tyndall Natl Inst, Cork, Ireland;

Natl Univ Ireland Univ Coll Cork, Dept Phys, Cork, Ireland;

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原文格式 PDF
正文语种英语
中图分类固体物理学;
关键词
STRAINED SI; ELECTRON-MOBILITY; SIXGE1-X ALLOYS; HOLE MOBILITY; SEMICONDUCTORS; SUBSTRATE; DEVICES; MODEL;

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First-principles calculation of p-type alloy scattering in Si1-xGex

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