Microscopic origin of light emission from AlyGa1-yN/GaN superlattices:Band profile and active site

Duanjun Cai; Junyong Kang; Guang-Yu Guo

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Microscopic origin of light emission from AlyGa1-yN/GaN superlattices:Band profile and active site

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摘要

We present first-principles calculations of AlGaN/GaN superlattice, clarifying the microscopic origin of the light emission and revealing the effect of local polarization within the quantum well. Profile of energy band and distributions of electrons and holes demonstrate the existence of a main active site in the well responsible for the main band-edge light emission. This site appears at the position where the local polarization becomes zero. With charge injection, the calculated optical spectra show that the broadening of the band gap at the active site leads to the blueshift of emission wavelength.

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《Physical review, B. Condensed matter and materials physics》 |2009年第4期|045311:1-045311:4|共4页
作者
Duanjun Cai; Junyong Kang; Guang-Yu Guo;
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作者单位

Department of Physics, National Taiwan University, Taipei 106, Taiwan;

Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China;

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正文语种英语
中图分类物理学;
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Band profile and active site; AlyGa1-yN/GaN superlattices; Microscopic origin;

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Microscopic origin of light emission from AlyGa1-yN/GaN superlattices:Band profile and active site

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