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首页> 外文期刊>Physical review, B. Condensed matter and materials physics >Hole drift mobility measurements in polycrystalline CuIn1xGaxSe2
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Hole drift mobility measurements in polycrystalline CuIn1xGaxSe2

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摘要

We present temperature-dependent hole drift mobility measurements on polycrystalline CuIn1xGaxSe2CIGS thin films incorporated into solar-cell structures. The drift mobilities were determined from photocarriertime-of-flight measurements in a depletion region at the top interface with cadmium sulfide. 12 cells,originating in two laboratories, were examined. The drift mobilities ranged from 0.02 to 0.7 cm2 /Vs at roomtemperature and were weakly temperature dependent in the range of 100–300 K. These drift mobilities are atthe low end of the range of hole mobilities reported from previous Hall effect and admittance measurements forvarying CIGS materials. We found approximately a square-root correlation between the width of the depletionlayer in our samples and the magnitude of the drift mobility. Both the magnitude and the temperature dependenceof the drift mobility are consistent with results in amorphous and nanocrystalline silicon that have beenmodeled using a disorder-induced transport edge. The source of nanometer-scale disorder in these CIGSmaterials is not noncrystallinity; chemical composition fluctuations are one alternative source of disorder. Thecorrelation of the depletion-width and drift mobility measurements in CIGS may be evidence for a broadereffect of disorder in these materials in both reducing the carrier drift mobility and generating acceptor defectsnear the valence bandedge. Hole drift mobilities are sensitive to disorder-induced traps near the valencebandedge. Our temperature-dependence measurements indicate that the width of the corresponding valencebandtail is less than 20 meV. Previous optical-absorption spectroscopy showed that Urbach tails in similarCIGS samples are generally 20 meV or wider, which indicates that the valence bandtail does not typicallydetermine the Urbach tails.

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