Synthesis of Wide Bandgap beta-Ga2O3 Rods on 3C-SiC-on-Si

Rafique Subrina; Han Lu; Zorman Christian A.Zhao Hongping

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Synthesis of Wide Bandgap beta-Ga2O3 Rods on 3C-SiC-on-Si

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This paper presents the synthesis of single crystalline, self-catalytic beta-Ga2O3 rods by a low pressure chemical vapor deposition technique. The effects of oxygen concentration and growth temperature on the morphology and growth rate of beta-Ga2O3 rods were studied. The beta-Ga2O3 rods were synthesized on a 3C-SiC film deposited on a silicon substrate utilizing high purity gallium (Ga) metal and oxygen (O-2) as source materials, and argon (Ar) as a carrier gas. X-ray diffraction, high resolution transmission electron microscopy, and Raman spectroscopy measurements were performed for the as-grown beta-Ga2O3 rods, which revealed a monoclinic phase of beta-Ga2O3 with single crystalline microstructure. The selected area electron diffraction pattern recorded on a single beta-Ga2O3 rod further verified their single crystalline nature. Because of their high crystalline quality and large surface area to volume ratio, these beta-Ga2O3 rods have a great potential for surface related applications such as photocatalysis, chemical sensing, and deep-ultraviolet photodetection.

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《Crystal growth & design》 |2016年第1期|511-517|共7页
作者
Rafique Subrina; Han Lu; Zorman Christian A.Zhao Hongping;
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Case Western Reserve Univ, Dept Elect Engn & Comp Sci, Cleveland, OH 44106 USA;

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正文语种英语
中图分类晶体学;
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Synthesis of Wide Bandgap beta-Ga2O3 Rods on 3C-SiC-on-Si

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