Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures

Tang  N; Shen  B; He  XWHan  KYang  ZJQin  ZXZhang  GYLin  TZhu  BZhou  WZ

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Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures

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The beating patterns in the oscillatory magnetoresistance originating from zero-field spin-splitting and magnetointersubband scattering (MIS) effects of the two-dimensional electron gas (2DEG) in AlxGa1-xN/GaN heterostructures have been investigated by means of magnetotransport measurements under illumination. It is observed that the energy separation between the two subbands decreases due to the weakened electric field at the AlxGa1-xN/GaN heterointerfaces after the illumination. Meanwhile, the beating nodes induced by the MIS effect shift to higher magnetic field due to the increase of the 2DEG concentration at the second subband, and the beating nodes induced by the zero-field spin-splitting effect shift to lower magnetic field due to the decrease of the spin-splitting energy of the 2DEG. Since the weakened electric field decreases the zero-field spin-splitting energy, it is suggested that the zero-field spin splitting of the 2DEG in AlxGa1-xN/GaN heterostructures mainly arises from the Rashba effect.

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来源
《Physical review, B. Condensed matter and materials physics》 |2007年第15期|155303-1-155303-5-0|共5页
作者
Tang N; Shen B; He XWHan KYang ZJQin ZXZhang GYLin TZhu BZhou WZ;
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作者单位

Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop, Beijing 100871, Peoples R China;

Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China;

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正文语种英语
中图分类固体物理学;
关键词
2-DIMENSIONAL ELECTRON-GAS; FIELD-EFFECT TRANSISTORS; ALGAN/GAN HETEROSTRUCTURE;

Influence of the illumination on the beating patterns in the oscillatory magnetoresistance in AlxGa1-xN/GaN heterostructures

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