Infrared study of a La0.7Sr0.3MnO3-delta micrometric transistor channel

Ortolani  M; Lee  JS; Schade  UPallecchi  IGadaleta  AMarre  D

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Infrared study of a La0.7Sr0.3MnO3-delta micrometric transistor channel

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We studied the polaron conductivity in a field-effect transistor (FET) based on the doped oxide La0.7Sr0.3MnO3-delta, where the electric field penetration depth is enhanced due to suppression of metallic conduction by large oxygen deficiency delta, by mid-infrared microspectroscopy (wavelengths from 1.4 to 12 mu m) on a 3 mu m wide active channel. Synchrotron radiation was used to obtain the mid-infrared response at the diffraction limit. We found that bound polarons, although clearly detected, play a minor role in the electric field-induced dc conductivity modulation, which may be then attributed to the accumulation/depletion of free carriers. (c) 2007 Elsevier B.V. All rights reserved.

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《Physica, B. Condensed Matter》 |2008年第11期|1922-1926|共5页
作者
Ortolani M; Lee JS; Schade UPallecchi IGadaleta AMarre D;
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作者单位

BESSY, D-12489 Berlin, Germany;

CNR, INFM, LAMIA, I-16146 Genoa, Italy;

Univ Genoa, I-16146 Genoa, Italy;

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原文格式 PDF
正文语种英语
中图分类物理学;
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infrared spectroscopy; synchrotron radiation; field-effect transistor; oxide electronics; polarons;

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Infrared study of a La0.7Sr0.3MnO3-delta micrometric transistor channel

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