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首页> 外文期刊>Physical review, B. Condensed matter and materials physics >Atomic distribution in InxGa1-xN single quantum wells studied by extended x-ray absorption fine structure
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Atomic distribution in InxGa1-xN single quantum wells studied by extended x-ray absorption fine structure

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摘要

The anisotropy of the local structure around In atoms in high quality InxGa1-xN (x=0.145,0.20,0.275) single quantum wells (SQWs) was investigated by fluorescence extended x-ray absorption fine structure measurements using linearly polarized x ray whose electric field was set to be both horizontal and vertical to the SQWs. The interatomic distance was isotropic for the nearest In-N, whereas for the second nearest In-Ga and In-In, the interatomic distance for out-of-plane atoms was longer than that for in-plane atoms. From the analyses of the coordination number for In-In and In-Ga, the In atom distribution in the In0.275Ga0.725N SQW was found to be statistically random in both directions. On the other hand, In atoms in the In0.20Ga0.80N SQW, corresponding to green light-emitting diodes (LEDs), were randomly distributed in the horizontal direction but aggregated in the vertical direction. Correlation was suggested between the vertical aggregation and the higher efficiency of InGaN-based blue to green LEDs.

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