Generalized rate-equation analysis of excitation exchange between silicon nanoclusters and erbium ions

A. J. Kenyon; M. Wojdak; I. AhmadW. H. LohC. J. Oton

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Generalized rate-equation analysis of excitation exchange between silicon nanoclusters and erbium ions

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We discuss the use of rate equations to analyze the sensitization of erbium luminescence by silicon nanoclusters. In applying the general form of second-order coupled rate-equations to the Si nanocluster-erbium system, we find that the photoluminescence dynamics cannot be described using a simple rate equation model. Both rise and fall times exhibit a stretched exponential behavior, which we propose arises from a combination of a strongly distance-dependent nanocluster-erbium interaction, along with the finite size distribution and indirect band gap of the silicon nanoclusters. Furthermore, the low fraction of erbium ions that can be excited nonresonantly is a result of the small number of ions coupled to nanoclusters.

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《Physical review, B. Condensed matter and materials physics》 |2008年第3期|035318.1-035318.9|共9页
作者
A. J. Kenyon; M. Wojdak; I. AhmadW. H. LohC. J. Oton;
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Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WCIE 7JE, United Kingdom;

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正文语种英语
中图分类固体物理学;
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optical properties of low-dimensional; mesoscopic; and nanoscale materials and structures; photoluminescence; properties and materials; photon interactions with molecules; photon interactions with atoms;

Generalized rate-equation analysis of excitation exchange between silicon nanoclusters and erbium ions

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