机译:
St Petersburg Acad Univ, Khlopina 8-3, St Petersburg 194021, Russia;
Univ Notre Dame, Notre Dame, IN 46556 USA;
Tech Univ Denmark, Dept Photon Engn, DK-2800 Lyngby, DenmarkTech Univ Denmark, Ctr Electron Nanoscopy, DK-2800 Lyngby, Denmark;
机译:GaAs/GaAsPBi core-shell nanowires grown by molecular beam epitaxy
机译:X-ray scattering study of GaN nanowires grown on Ti/Al_2O_3 by molecular beam epitaxy
机译:The role of surface states and point defects on optical properties of InGaN/GaN multi-quantum wells in nanowires grown by molecular beam epitaxy
机译:mn注入和室温下的室温铁磁性行为 通过molecular Beam Epitaxy沉积的后退火Inas层