Initial formation mechanisms of (Ga1-xMnx)N nanorods grown on Al2O3 (0001) substrates

Lee  KH; Lee  JY; Jeon  HCKang  TWKwon  HYKim  TW

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Initial formation mechanisms of (Ga1-xMnx)N nanorods grown on Al2O3 (0001) substrates

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摘要

The (Ga1-xMnx)N nanorods were grown oil Al2O3 (0001) substrates by using rf-associated molecular beam epitaxy. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected-area diffraction pattern (SADP) results showed that the (Ga1-xMnx)N nanorods had (0001) preferential orientations. XRD patterns showed that the (Ga1-xMnx)N nanorods contained a small number of grains with different preferred orientations. High-resolution TEM (HRTEM) images showed that the (Ga1-xMnx)N nanorods consisted of different preferentially oriented grains. The initial formation mechanisms for the (Ga1-xMnx)N nanorods grown on Al2O3 (0001) substrates are described on the basis of the XRD, the TEM, the SADP, and the HRTEM results.

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来源
《Journal of Materials Research》 |2008年第12期|3275-3280|共6页
作者
Lee KH; Lee JY; Jeon HCKang TWKwon HYKim TW;
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作者单位

[Kwon, HY;

Kim, TW] Hanyang Univ, Div Elect & Comp Engn, Adv Semicond Res Ctr, Seoul 133791, South Korea;

[Lee, KHLee, JY] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea[Jeon, HCKang, TW] Dongguk Univ, Dept Phys, Seoul 100715, South Korea;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
MOLECULAR-BEAM EPITAXY; OPTICAL-PROPERTIES; ELECTRON-SPIN; GAMNN FILMS;

Initial formation mechanisms of (Ga1-xMnx)N nanorods grown on Al2O3 (0001) substrates

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