Study of a Macrodefect in a Silicon Carbid Single Crystal by Means of X-Ray Phase Contrast

Argunova T. S.; Kohn V. G.; Lim J. H.Je J. H.

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Study of a Macrodefect in a Silicon Carbid Single Crystal by Means of X-Ray Phase Contrast

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The morphology of a macrodefect in a single-crystal silicon carbide wafer has been investigated by the computer simulation of an experimental X-ray phase-contrast image. A micropipe, i.e., a long cavity with a small (elliptical in the general case) cross section, in a single crystal has been considered as a macrodefect. A far-field image of micropipe has been measured with the aid of synchrotron radiation without a monochromator. The parameters of micropipe elliptical cross section are determined based on one projection in two directions: parallel and perpendicular to the X-ray beam propagation direction, when scanning along the pipe axis. The results demonstrate the efficiency of the phase contrast method supplemented with computer simulation for studying such macrodefects when the defect position in the sample volume is unknown before-hand.

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《Crystallography reports》 |2016年第6期|914-917|共4页
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Argunova T. S.; Kohn V. G.; Lim J. H.Je J. H.;
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Kurchatov Inst, Natl Res Ctr, Pl Akad Kurchatova 1, Moscow 123182, Russia;

Pohang Accelerator Lab, Pohang 790834, South Korea;

Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South KoreaRussian Acad Sci, Ioffe Inst, Ul Politekhn Skaya 26, St Petersburg 194021, Russia;

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正文语种英语
中图分类晶体学;
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Study of a Macrodefect in a Silicon Carbid Single Crystal by Means of X-Ray Phase Contrast

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