Hall effect in pinned and sliding states of NbSe3

Sinchenko AA; Monceau P; Crozes TChernikov RVIvanov AA

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Hall effect in pinned and sliding states of NbSe3

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摘要

We report the results of detailed investigations of Hall effect in NbSe3 under magnetic fields up to B = 9T. We show that the Hall voltage, V-H, changes sign in a wide temperature range and that the magnetic field for which V-H crosses zero is temperature dependent. We demonstrate that in high magnetic field the CDW motion changes significantly the Hall voltage. These results indicate that, in NbSe3, the CDW in the sliding state interacts differently with electrons and holes.

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《Physica, B. Condensed Matter》 |2009年第4期|426-429|共4页
作者
Sinchenko AA; Monceau P; Crozes TChernikov RVIvanov AA;
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作者单位

Moscow Engn Phys Inst, Moscow 115409, Russia.;

CNRS, Dept MCBT, Inst NEEL, F-38042 Grenoble, France.;

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原文格式 PDF
正文语种英语
中图分类物理学;
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Charge-density-wave; Magnetoresistance; Hall effect;

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Hall effect in pinned and sliding states of NbSe3

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