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首页> 外文期刊>Journal of Materials Research >Optical properties and annealing effects on the deep levels in-doped CdTe/Cd_(0.96)Zn_(0.04)Te (211) B heterostructures
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Optical properties and annealing effects on the deep levels in-doped CdTe/Cd_(0.96)Zn_(0.04)Te (211) B heterostructures

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摘要

Photoluminescence (PL) and photo-induced-current transient spectroscopy measurements on As-dopedCdTe/Cd_(0.96) Zn_(0.04) Te heterostructures grown bymolecular beam epitaxy were carried out to investigate theoptical properties and the annealing effects on the deep levels.The temperature dependence of the PL spectra showed that theluminescence intensity of the exciton peak related to the neutralacceptors (A deg, X) creased with increasing measurementtemperature and that the activation energy of (A deg, X) thepeak for the As-doped CdTe epilayer was 7 meV. Five hole-trappeaks appeared for the annealed As-dopedCdTe/Cd_(0.96)Zn_(0.04) Te heterostructure. Two of thesepeaks, denoted by H_1 and H_2, might be related to extrinsicimpurities, and the other three peaks, represented by H_3, H_4,and H_5, might be attributed to intrinsic impurities. Theseresults can help improve understanding for the application ofAs-doped CdTe/ Cd(0.96)Zn_(0.04) Te heterostructures in optoelectronic devices.

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