We report on three novel vertical-cavity laser (VCL) structures for 1.55-μm operation. Two of the structures utilize an n-type GaInAsP/InP Bragg mirror combined with an Al(Ga)As/GaAs mirror using either wafer fusion or metamorphic epitaxial growth. The third employs two wafer-fused AlGaAs/GaAs mirrors, in which lateral current confinement is obtained by localized fusion of the p mirror. All three VCLs use strained GaInAsP quantum wells as active material and achieve continuous-wave (cw) operation at room temperature or above. The single fused VCL operates up to 17 and 101℃ in continuous-wave and pulsed mode, respectively. The monolithic VCL-structure with a metamorphic GaAs/AlAs n-type mirror uses a reverse-biased tunnel junction for current injection. This laser achieves record high output power (1 mW) at room temperature and operates cw up to 45℃. The double fused VCLs with a 10×10-μm~(2) active area operate cw up to 30℃ with threshold current as low as 2.5 mA and series resistance of 30 Ω. The emission spectra exhibit a single lasing mode polarized with 30-dB extinction ratio and a spectral linewidth of 150 MHz.
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