Over the last several years, high-energy (in MeV range) ion implantation has become an integral part of mainstream semiconductor device manufacturing. The rapid growth in use of high-energy implanters has been driven by process and performance requirements for sub 0.25μm device nodes. At Eaton, we have developed an rf linac based high-energy implanter, NV-GSD/VHE, capable of delivering in excess of one particle mA of B↑(+) beam current at energies approaching 1.7 MeV. The Linac's output energy is almost doubled if B↑(++) ions are used. However, for fixed implanter throughput an ion source capable of sourcing ～5 particle mA of B↑(++) is required. The 90 un-normalized emittance at 90 keV should be less than 150 π mm mrad. We are investigating three completely different ion source technologies, hot cathode, rf-driven bucket, and electron cyclotron resonance ion sources as candidates. The present performance and the future expectation from each of these ion source technologies will be discussed. # 1998 American Institute of Physics. S0034-6748(98)57102-X
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