We report measurements of the characteristics of a junction field effect transistor (JFET) in applied magnetic fields up to 30 T. For orientations parallel to the applied field, the device maintained a high transconductance (g↓(fs)) close to 80 of the zero field value. For field orientations perpendicular to the plane of current transport; g↓(fs) decreased by a factor of 6 at 30 T. This field dependence can be understood quantitatively in terms of the magnetoresistance associated with the cyclotron motion of current carriers within the conductive channels of the JFET. The results show that for suitable orientations the JFET may be used “in situ” for applications in very high fields. # 1998 American Institute of Physics. S0034-6748(98)01701-8
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