Material parameters of In1minus;xGaxAsyP1minus;yand related binaries

Sadao Adachi

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Material parameters of In1minus;xGaxAsyP1minus;yand related binaries

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Various models for calculation of physical parameters in compound alloys are discussed and the results for In1minus;xGaxAsyP1minus;yquaternaries are presented. The model used is based on a linear interpolation scheme, and therefore necessitates known values of the parameters for the related binary and ternary alloys. The material parameters considered in the present study can be classified into the following eleven groups: (1) lattice constant and crystal density, (2) thermal expansion coefficient, (3) electronichyphen;band structure, (4) external perturbation effect on the lowesthyphen;direct gap, (5) effective mass, (6) dielectric constant, (7) Frouml;hlich coupling parameter, (8) elastic properties, (9) piezoelectric properties, (10) deformation potential, and (11) excitonic effect. Of particular interest is the deviation of material parameters from linearity with respect to the alloy composition. It is found that the present model provides generally acceptable parameters, in good agreement with the existing experimental data. A detailed discussion is also given on the acceptability of such interpolated parameters from an aspect of the solidhyphen;state physics. Key properties of the material parameters for a variety of In1minus;xGaxAsyP1minus;ydevice applications are also discussed.

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《journal of applied physics》 |1982年第12期|8775-8792|共页
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Sadao Adachi;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Material parameters of In1minus;xGaxAsyP1minus;yand related binaries

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