We have calculated the electronic band structure and polarization dependent optical gain in a strain balanced SixGeySn1-x-y/GezSn1-z based transistor laser (TL) with GezSn1-z single quantum well (QW) in the base. Design consideration for QW is also addressed to ensure moderate carrier and optical confinement. A significant TE mode optical gain is obtained in mid infra red region for the transition of Gamma valley conduction band to heavy hole valence band. Optical gain in the QW plays an important role in determining the optical characteristics of Tin (Sn) incorporated group IV material based TL.
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