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首页> 外文期刊>Physical review, B. Condensed matter and materials physics >Large magnetoresistance of a dilute p-SioSiGeo Si quantum well in a parallel magnetic fielda
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Large magnetoresistance of a dilute p-SioSiGeo Si quantum well in a parallel magnetic fielda

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We report the results of an experimental study of the magnetoresistance xx in two samples of p-Si/SiGe/ Siwith low carrier concentrations p=8.21010 cm?2 and p=21011 cm?2. The research was performed in thetemperature range of 0.3–2 K in the magnetic fields of up to 18 T, parallel to the two-dimensional 2D channelplane at two orientations of the in-plane magnetic field B against the current I: BI and B I. In the samplewith the lowest density in the magnetic field range of 0–7.2 T, the temperature dependence of xx demonstratesthe metallic characteristics dxx /dT0. However, at B=7.2 T the derivative dxx /dT reverses the sign.Moreover, the resistance depends on the current orientation with respect to the in-plane magnetic field. AtB13 T there is a transition from the dependence lnxx /0B2 to the dependence lnxx /0B. Theobserved effects can be explained by the influence of the in-plane magnetic field on the orbital motion of thecharge carriers in the quasi-2D system.

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