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首页> 外文期刊>journal of applied physics >Infrared and highhyphen;energy electron diffraction analyses of electronhyphen;beamhyphen;evaporated MgO films
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Infrared and highhyphen;energy electron diffraction analyses of electronhyphen;beamhyphen;evaporated MgO films

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Infrared spectroscopy and reflection highhyphen;energy electron diffraction have been used to analyze MgO films deposited at various deposition rates on rsquo;rsquo;infraredrsquo;rsquo; silicon wafers and hard glass substrates at various temperatures. Infrared spectra obtained for MgO films deposited at rates of 1350ndash;1500 Aring;/min on substrates at room temperature and at 200thinsp;deg;C showed that the amount of hydroxyl groups present was significantly less in the 200thinsp;deg;C deposited films. The spectra also showed that the amount of hydroxyl groups present in films deposited at a very fast rate (sim;7800 Aring;/min) was much less than that in films deposited at a very slow rate (sim;160 Aring;/min) on substrates at 200thinsp;deg;C. Some of the hydroxyl groups initially present in films deposited at sim;160 Aring;/min and most of the hydroxyl groups in films deposited at sim;1350 Aring;/min were removed by annealing the films in dry nitrogen at 500thinsp;deg;C. The electron diffraction patterns obtained for MgO films (100ndash;3000 Aring;) deposited at rates of 1350ndash;1500 Aring;/min on substrates at a temperature in the range from room temperature to 200thinsp;deg;C showed that the films initially nucleated in random orientation and as the film thickness was increased to and above 500 Aring;, a lang;111rang; preferred orientation developed at the surface independent of substrate temperature. These results suggest that adsorption of residual water on MgO does not influence the mode of film growth. The lang;111rang; preferred orientation developed in films deposited on substrates at 200thinsp;deg;C dissolved, and some degree of the lang;100rang; preferred orientation developed upon annealing in dry nitrogen at 500thinsp;deg;C. The preferred orientation remained, however, unchanged when these films were annealed in dry air. The orientation also remained unchanged when films deposited on substrates at room temperature were annealed in dry nitrogen at 500thinsp;deg;C. These results suggest that the presence of hydroxyl ions and oxygen adsorption inhibit surface diffusion and, hence, the dissolution of the orientation during annealing.

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