Strain solitons and topological defects in bilayer graphene

Alden J.S.; Tsen A.W.; Huang P.Y.Hovden R.Brown L.Park J.Muller D.A.McEuen P.L.

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Strain solitons and topological defects in bilayer graphene

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Bilayer graphene has been a subject of intense study in recent years. The interlayer registry between the layers can have dramatic effects on the electronic properties: for example, in the presence of a perpendicular electric field, a band gap appears in the electronic spectrum of so-called Bernal-stacked graphene Oostinga JB, et al. (2007) Nature Materials 7:151-157. This band gap is intimately tied to a structural spontaneous symmetry breaking in bilayer graphene, where one of the graphene layers shifts by an atomic spacing with respect to the other. This shift can happen in multiple directions, resulting in multiple stacking domains with soliton-like structural boundaries between them. Theorists have recently proposed that novel electronic states exist at these boundaries Vaezi A, et al. (2013) arXiv:1301.1690; Zhang F, et al. (2013) arXiv:1301.4205, but very little is known about their structural properties. Here we use electron microscopy to measure with nanoscale and atomic resolution the widths, motion, and topological structure of soliton boundaries and related topological defects in bilayer graphene. We find that each soliton consists of an atomic-scale registry shift between the two graphene layers occurring over 6-11 nm. We infer the minimal energy barrier to interlayer translation and observe soliton motion during in situ heating above 1,000°C. The abundance of these structures across a variety of samples, as well as their unusual properties, suggests that they will have substantial effects on the electronic and mechanical properties of bilayer graphene.

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《Proceedings of the National Academy of Sciences of the United States of America》 |2013年第28期|11256-11260|共5页
作者
Alden J.S.; Tsen A.W.; Huang P.Y.Hovden R.Brown L.Park J.Muller D.A.McEuen P.L.;
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作者单位

School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, United States;

Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY 14853, United States;

Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, United States;

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收录信息美国《科学引文索引》(SCI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
原文格式 PDF
正文语种英语
中图分类自然科学总论;
关键词
Domain wall; Stacking faults; STEM; TEM;

Strain solitons and topological defects in bilayer graphene

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