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首页> 外文期刊>Solid-State Electronics >Light emission from individual InAs/GaAs self-assembled quantum dots excited by tunneling current injection
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Light emission from individual InAs/GaAs self-assembled quantum dots excited by tunneling current injection

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摘要

Emission from individual InAs quantum dots by tunneling current injection using a scanning tunneling microscope (STM) is reported. By scanning the STM tip above the self-assembled InAs quantum dot structures, a spatially resolved scanningtunneling luminescence (STL) image was measured, which contained some peaks originating from InAs quantum dots. The width of these peaks are of the same size as the average dot size, suggesting that the resolution of this method is much higher than 20 nm.

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