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首页> 外文期刊>Solid-State Electronics >Far-infrared photoresponse of the AlGaAs/GaAs low-dimensional electron systems constricted by split-gates
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Far-infrared photoresponse of the AlGaAs/GaAs low-dimensional electron systems constricted by split-gates

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摘要

We have investigated the far-infrared photoresponse of a split-gate quantum point contact by Fourier transform infrared spectroscopy. It is found that there are two components in the measured photosignals; the photovoltaic component is attributedto the asymmetric electron heating due to the cyclotron absorption in the ungated region. The photoresistive component is attributed to the electron heating induced by inter-subband absorption at the constricted region.

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