Formation and optical properties of carbon-induced Ge dots

K. Eberl; O. G. Schmidt; S. SchiekerN. Y. Jin-PhillippF. Phillipp

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Formation and optical properties of carbon-induced Ge dots

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A small portion of a monolayer of pre-deposited carbon on Si (100) causes Ge island formation after epitaxial growth of less than two monolayers (ML) Ge. The epitaxial growth is done in a solid source MBE system. The carbon-induced Ge quantum dots can be as small as 10 nm in lateral size and 1 to 2 nm in height. The area density is about 1× 10{sup}11 cm{sup}-2. Pure Ge on Si forms large dots of about 100 nm in lateral size. Compared to Si/SiGe quantum wells and neighboringSi{sub}1-xGe{sub}x/Si{sub}1-yC{sub}y quantum wells we observe very intensive photoluminescence (PL) signal from such small Ge dots. Varying the C and Ge deposition reveals a distinct PL intensity maximum for 0.2 ML C followed by about 2.2 ML Ge. Wepropose a spatially indirect radiative recombination mechanism. Vertical stacking of the C-induced Ge dots results in strongly increased PL intensity and red shifted transition energy.

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《Solid-State Electronics》 |1998年第8期|1593-1597|共5页
作者
K. Eberl; O. G. Schmidt; S. SchiekerN. Y. Jin-PhillippF. Phillipp;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
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机译：Growth temperature dependence on the formation of carbon-induced Ge quantum dots
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Formation and optical properties of carbon-induced Ge dots

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