We performed time-resolved luminescence spectroscopy on self-assembled InP dots in GaInP lattice-matched to GaAs. The radiative lifetime of InP-dot luminescence is independent of temperature below 20 K, and is linear with temperature between 20and 160 K. These two features in two temperature regimes are characteristic of zero-dimensional and two-dimensional structures, respectively. This temperature behavior of the lifetime is thought to be caused by the disk-like shape of the InP dots havingan intermediate character between the zero-dimensional and the two-dimensional. At a low temperature of 2 K where the zero-dimensional feature is revealed, the carrier injection time from the GaInP matrix to the InP dots is estimated to be ～100 Ps. Thistime is determined by carrier diffusion in the matrix.
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