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>Temperature dependence of Exciton lifetimes in high-density GaAs/(GaAs){sub}4(AlAs){sub}2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
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Temperature dependence of Exciton lifetimes in high-density GaAs/(GaAs){sub}4(AlAs){sub}2 quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy
Photoluminescence (PL) decay time and its temperature dependence were studied in highdensity GaAs/(GaAs){sub}4(AlAs){sub}2 quantum wires (QWRs) grown on a (775)B GaAs substrate by molecular beam epitaxy, which are naturally formed in a 2.1 nm-wide GaAs/(GaAs){sub}4(AlAs){sub}2 quantum well (QW) with a corrugated upper AlAs/GaAs interface (a lateral period of 12 nm and a vertical amplitude of 1.2 nm) and a flat lower GaAs/AlAs interface. The PL decay time of the (775)B QWRs (τ{sup}QWR) was 430 psat 18 K, which is about 20 longer than that (τ{sup}QW = 360 ps) of a GaAs/(GaAs){sub}4(AlAs){sub}2 QW simultaneously grown on a (100) GaAs substrate. τ{sup}QWR increased slowly with increasing temperature (T) as τ{sup}QWR= 30T{sup}1/2 +290 (ps), while τ{sup}QW varied as τ{sup}QW= 6T + 240 (ps). As a result, τ{sup}QWR became shorter than τ{sup}QW at 50 K. The PL decay time of the (775)B QWRs becomes longer again than that of the (100) QW in the rage of 70-80 K. These results suggest goodone-dimensional characteristics of the (775)B QWRs.
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