Matrix-dependent structural and photoluminescence properties of In{sub}0.5Ga{sub}0.5As quantum dots grown by molecular beam epitaxy

T. -E. Nee; N. -T. Yeh; J. -I. ChyiC. -T. Lee

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Matrix-dependent structural and photoluminescence properties of In{sub}0.5Ga{sub}0.5As quantum dots grown by molecular beam epitaxy

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The properties of the self-organized In{sub}0.5Ga{sub}0.5As quantum dots on In{sub}0.1Ga{sub}0.9As, GaAs, and In{sub}0.1Al{sub}0.9As surfaces and matrices are investigated using atomic force microscopy (AFM) and photoluminescence (PL). It is found that both the size variation and the density of the quantum dots depend closely on the matrix materials. PL spectra indicate that the In{sub}0.5Ga{sub}0.5As quantum dots in In{sub}0.1Ga{sub}0.9As matrix exhibit higher intensity as compared to those inGaAs and In{sub}0.1Al{sub}0.9As matrices. It is also found that the activation energy of the In{sub}0.5Ga{sub}0.5As quantum dots in GaAs matrix is higher than that of the dots in In{sub}0.1Ga{sub}0.9As matrix. Whereas the quantum dots inIn{sub}0.1Al{sub}0.9As matrix exhibit the lowest activation energy due to higher carrier hopping probability and defect density.

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《Solid-State Electronics》 |1998年第8期|1331-1334|共4页
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T. -E. Nee; N. -T. Yeh; J. -I. ChyiC. -T. Lee;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
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Matrix-dependent structural and photoluminescence properties of In{sub}0.5Ga{sub}0.5As quantum dots grown by molecular beam epitaxy

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