We report on the performance at 1.55 μm of a hybrid receiver combining an In0.47Ga0.53As metal-semiconductor-metal photodetector (with buried AllnAs buffer layer) with a GaAs MESFET preamplifier. A bit error rate of 10-9is measured at 1 Gbps with nonreturn to zero pseudorandom bit sequence (215–1) at a received optical power of −19 dBm. Modification of the preamplifier design and a reduction of bond pad size could improve the sensitivity by ∼
展开▼
