...
首页> 外文期刊>optical and quantum electronics >Some relations for the far-field distribution of semiconductor lasers with gain-guiding
【24h】

Some relations for the far-field distribution of semiconductor lasers with gain-guiding

机译:

获取原文
           

摘要

Simple relations for the phase distribution of the fundamental mode of gain-guided lasers are derived, yielding simple, approximate analytic expressions for the far-field distribution parallel to the junction in the case of strong astigmatism. It is shown that the shape of the far-field distribution is essentially determined solely by the distribution of the effective refractive index parallel to the active layer. The relations may be used for any shape of the effective refractive index distribution to yield simple arguments as to why there are lasers which exhibit far-field distributions with double as well as triple maxima. Because of the simplicity of the expressions for the far-field distribution it is also possible to make an estimate of the shape of the carrier profile, once the near-field and far-field intensity distributions are known. In addition, a general relation between the normalized fundamental mode gain and the shape of the far-field distribution is given.

著录项

  • 来源
    《optical and quantum electronics》 |1981年第4期|323-333|共页
  • 作者

    KlausPetermann;

  • 作者单位

    Forschungsinstitut;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类
  • 关键词

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号