Wavefunction delocalization of strongly-localized stark-ladder states in a GaAs/AlAs superlattice

M. Ando; M. Nakayama; H. NishimuraM. HosodaN. OhtaniN. EgamiK. Fujiwara

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Wavefunction delocalization of strongly-localized stark-ladder states in a GaAs/AlAs superlattice

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摘要

We have investigated the wavefunction-localization properties as a function of electric field from ～30 to～300 kV/cm in a GaAs(6.8 nm)/AlAs(0.8 nm) superlattice by using electroreflectance spectroscopy to observe Stark-ladder transitions. It hasbeen found from the electric-field dependence of the electroreflectance spectra that the electron wavefunctions are delocalized after they are fully localized in individual quantum wells in a high electric-field regime. We conclude that the wavefunctiondelocalization results from the tunneling effect induced by the interaction between the spatially-separated first and second Stark-ladder states from the analysis of the eigenstates based on a transfer-matrix method in the framework of anenvelope-function approximation.

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《Solid-State Electronics》 |1998年第8期|1499-1503|共5页
作者
M. Ando; M. Nakayama; H. NishimuraM. HosodaN. OhtaniN. EgamiK. Fujiwara;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种英语
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1. Selective Stark-ladder transitions in an asymmetric double-well GaAs/AlAs superlattice [J] . Kenzo Fujiwara, Shin-ichi Hinooda, Kenji Kawashima Applied physics letters . 1997,第4期

机译：Selective Stark-ladder transitions in an asymmetric double-well GaAs/AlAs superlattice
2. Electrical measurements onn+hyphen;GaAs/undoped AlAs/nhyphen;GaAs andn+hyphen;GaAs/undoped AlAs:GaAs superlattice/nhyphen;GaAs capacitors [J] . P. B. Kirby, T. M. Kerr applied physics letters . 1987,第25期

机译：Electrical measurements onn+hyphen;GaAs/undoped AlAs/nhyphen;GaAs andn+hyphen;GaAs/undoped AlAs:GaAs superlattice/nhyphen;GaAs capacitors
3. Stark-ladder transition in a type-II (GaAs)SUB8/SUB/(AlAs)SUB8/SUBsuperlattice [J] . M Yamaguchi, H Nagasawa, M MorifujiK TaniguchiC HamaguchiC GmachlE Gornik semiconductor science and technology . 1994,第10期

机译：Stark-ladder transition in a type-II (GaAs)SUB8/SUB/(AlAs)SUB8/SUBsuperlattice
4. Gamma-X band mixing in GaAs/AlAs superlattice [C] . Guoyun Ru, Z. B. Chen, X. Yu, International conference on applications of photonic technology . 2003

机译：Gamma-X带混合在GaAs / Alas Superlattice中
5. GaAs/AlAs ASPAT Diodes for Millimetre and Sub-Millimetre Wave Applications [D] . Abdullah, Mohd Rashid Redza Bin. 2018

机译：GAAS / ALAS ASPAT二极管用于毫米和亚毫米波应用
6. A High-Throughput Study of the Electronic Structure and Physical Properties of Short-Period (GaAs)m(AlAs)n (m n ≤ 10) Superlattices Based on Density Functional Theory Calculations [O] . Qing-Lu Liu, Zong-Yan Zhao, Jian-Hong Yi, 2018

机译：基于密度泛函理论计算的短周期（GaAs）m（AlAs）n（mn≤10）超晶格的电子结构和物理性质的高通量研究
7. (775)B GaAs キバンジョウニ MBE セイチョウシタチョウコウミツド GaAs (GaAs)m (AlAs)n リョウシサイセン [O] . Higashiwaki Masataka, ヒガシワキマサタカ, 東脇正高 2017

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8. Inelastic Tunneling in AlAs-GaAs-AlAs Heterostructures [R] . Mendez, E. E., Calleja, E., Wang, W. I. 1988

机译：alas-Gaas-alas异质结构中的非弹性隧道效应

Wavefunction delocalization of strongly-localized stark-ladder states in a GaAs/AlAs superlattice

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