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首页> 外文期刊>精密工学会誌 >A Study on Surface Formation Mechanism by Molecular Beam Epitaxy (1st Report) - An Effect of Energy and Density of Adsorbed Molecules upon Si-Si Homo-Epitaxial Growth Mechanism -
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A Study on Surface Formation Mechanism by Molecular Beam Epitaxy (1st Report) - An Effect of Energy and Density of Adsorbed Molecules upon Si-Si Homo-Epitaxial Growth Mechanism -

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Surface formation mechanism in a silicon-silicon homo-epitaxial molecules' growing process is carefully investigated by the help of AFM and RHEED. Observation of epitaxially grown surfaces showed that their crystallographic properties were improved much by having given a proper amount of thermal energy to adsorbed molecules through substrates, however, were not influenced by their density. On the other hand, the surface geometrical features were affected by both of the thermal energy and molecules' density, in addition, by a substrate crystal orientation. Namely, many nuclei were first formed and combined together with an epitaxial growth in the case of (100) substrate, however, many atomic layer steps were formed, extended and piled each other in the case of (111) substrate. Generally, the higher energy and lower density of adsorbed molecules could realize more coarse and larger nuclei and piled steps. These experimental results could be well explained by identifying their epitaxial growth mode first, then, taking either possible migration distances of adsorbed molecules and probability of their impingement into account.

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