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Modeling of Grain-Boundary Effects and Intergranular and Transgranular Failure in Polycrystalline Intermetallics

机译:多晶金属间化合物的晶界效应以及晶间和晶间破坏的建模

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摘要

A three-dimensional multiple-slip dislocation-density-based crystalline formulation and specialized finite-element formulation were used to investigate dislocation-density transmission and blockage in nickel-aluminide polycrystalline aggregates, which were subjected to dynamic loading conditions, with a macroscopic crack and different distributions of random low-angle and coincident site lattice (CSL) grain boundaries (GBs). An interfacial GB scheme was developed to determine whether dislocation-density pileups or transmissions occur as immobile and mobile dislocation densities evolve along different slip systems. The three-dimensional dislocation-density-based crystalline formulation is based on inter-related mechanisms that can occur due to the generation, trapping, interaction, and annihilation of mobile and immobile dislocation densities that are generally associated with large strain-high-strain-rate plasticity in L1_2-ordered intermetallics. A crack-tip shielding factor was also formulated to delineate between transgranular and intergranular crack growth. The current results indicate that aggregates with a high frequency of SIGMA33a GBs would be susceptible to blunted transgranular crack growth due to high dislocation-density transmission rates and shear-stress accumulations, and that an aggregate with a high frequency of SIGMAl7b GBs would be susceptible to sharp intergranular growth due to a large number of dislocation-density pileups and an accumulation of large normal stresses ahead of the crack tip.
机译:基于三维滑移位错密度的晶体配方和专门的有限元配方,研究了镍铝多晶骨料在动态载荷条件下,宏观裂纹和开裂的位错密度传递和阻塞。随机低角度和重合位点晶格(CSL)晶界(GBs)的不同分布。开发了一种界面GB方案来确定当固定和移动位错密度沿着不同的滑移系统发展时是否发生位错密度堆积或传输。基于三维位错密度的晶体配方基于相互关联的机理,这些机理可能是由于移动和不固定位错密度的产生,捕获,相互作用和ni灭而发生的,而这些通常与大应变-高应变-应变相关。 L1_2有序金属间化合物的可塑性还制定了裂纹尖端屏蔽因子,以描绘出晶间和晶间裂纹扩展。当前结果表明,由于高位错密度传递速率和剪切应力累积,具有高频率SIGMA33a GBs的聚集体将易于钝化穿晶裂纹扩展,而具有高频率SIGMAl7b GBs的聚集体将易于受到影响。由于大量的位错密度堆积和裂纹尖端前的大量法向应力的积累,导致了急剧的晶间生长。

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