A New Isotropic Dry Etching Using CIF_3 Gas for Si Micromachining

Ueda T.; Kuribayashi K.

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A New Isotropic Dry Etching Using CIF_3 Gas for Si Micromachining

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Within the micromachining field, which is based on semiconductor manufacturing technology, wet etching and plasma etching are generally used as the isotropic etching for producing movable parts on silicon wafer. However, these methods have the following disadvantages. 1) Wet etching; ①Dynamic damage such as surface tension occurs, ②It is difficult to perform in-line etching, 2) Plasma etching; ①Thermal damage due to plasma, ②Detoxication at high-temperature is required. To solve them, it is proposed a new isotropic dry etching using ClF_3 gas. The following results e obtained experimentally; (1) Si can be etched isotropically by CIF_3 gas at room temperature and atmospheric pressure, (2) Ni film electroplated and Cr film sputtered e useful as makes for CIF_3 gas dry etching, (3) Ni rotor electroplated on Si could be released by the proposed CIF_3 gas etching.

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《精密工学会誌》 |2000年第6期|871-875|共5页
作者
Ueda T.; Kuribayashi K.;
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作者单位

Project Leader,Animal Health and Welfare,Cheshire County Council;

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原文格式 PDF
正文语种日语
中图分类机械制造工艺;仪器、仪表;
关键词
CIF_3 gas; dry etching; micromachining; silicon; isotropic etching; plasmaless etching;

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机译：Isotropic Silicon Etching With $hbox{XeF}_{2}$ Gas for Wafer-Level Micromachining Applications
2. Si and GaAs dry etching utilizing showered electronhyphen;beam assisted etching through Cl2gas [J] . S. Matsui, H. Watanabe applied physics letters . 1991,第18期

机译：Si and GaAs dry etching utilizing showered electronhyphen;beam assisted etching through Cl2gas
3. Maskless texturization of phosphorus-diffused layers for crystalline Si solar cells by plasmaless dry etching with chlorine trifluoride gas [J] . Kohata H., Saito Y. Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2010,第12期

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A New Isotropic Dry Etching Using CIF_3 Gas for Si Micromachining

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