High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (1st Report)-Examination of Deposition Rate and Film Structure

Mori Y.; Kakiuchi H.

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High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (1st Report)-Examination of Deposition Rate and Film Structure

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Using atmospheric pressure plasma CVD (chemical vapor deposition) technique, hydrogenated amorphous Si_(1-x)C_x (a-Si_(1-x)C_x:H) films were deposited with extremely high deposition rate. The films were prepared on Si(OO1) wafers in atmospheric pressure VHF (very high frequency) plasma of gas mixtures containing He, H_2, SiH_4 and CH_4. Film properties (structure, density and composition of a-Si_(1-x)C_x:H) were studied as a function of CH_4 concentration by TEM (transmission electron microscopy), AES (Auger electron spectroscopy) and IR (infrared) absorption spectroscopy. Relation between IR absorption spectra and chemical resistance of the films to 15 percent KOH solution was also investigated. The maximum deposition rate was 50nm/s, which was more than 10 times faster than that achieved by the conventional plasma CVD technique. It was found that CH_4 molecules contributed to the film growth when SiH_4 was co-existed with SiH_4 to CH_4 concentration ratio of 1/10. In this case, C to Si composition ratio in the film was 2 (a-Si_(0.33)C_(0.67):H). The density of a-Si_(1-x)C_x:H film was about 1.5g/cm~3 being less than half of the crystalline value of SiC. The a-Si_(0.33)C_(0.67):H film was not etched by KOH solution, which was supported by IR analysis of the Si-C stretching vibration mode.

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《精密工学会誌》 |2000年第6期|907-911|共5页
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Mori Y.; Kakiuchi H.;
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中图分类机械制造工艺;仪器、仪表;
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high-rate deposition; amorphous silicon carbide; atmospheric pressure plasma; plasma CVD; rotary electrode;

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High-Rate Deposition of Amorphous SiC Films by Atmospheric Pressure Plasma Chemical Vapor Deposition (1st Report)-Examination of Deposition Rate and Film Structure

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