Gd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

Gan RJ.; Qi L.; Wang JZ.Liu FM.

首页> 外文期刊>Journal of Materials Research >Gd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

【24h】

Gd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

机译：

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Gd-doped amorphous silicon films have been prepared by the electron beam evaporation technique, employing the experimental methods of de conductivity temperature properties, ESR (electron spin resonance) spectra, and optical band gap E-opt measurements. We have investigated the optical and electrical properties of the films. The results show that at 290 K < T < 330 K, hopping conduction in Gd impurity states near Fermi level is predominant, and at 330 K < T < 500 K extended state conduction dominates due to electrons exited from the impurity states. At a Gd concentration of about 1.0 at. spin density N-s, peak-peak width Delta B-pp and line-shape factor l of ESR spectra change their dependence on Gd contents. The optical gap of the films narrows with increasing Gd contents in the films from 1.68 eV to 0.42 eV, The results were explained on the basis of the partial compensation of Gd atoms for dangling bonds Si-3(0). References: 15

著录项

来源
《Journal of Materials Research》 |1998年第7期|1795-1798|共4页
作者
Gan RJ.; Qi L.; Wang JZ.Liu FM.;
展开▼
作者单位

BIM, Dept Basic Sci Courses, Beijing 100085, Peoples R China, .;

atkelco.com;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
Alpha-si-h; Ions; Implantation; Transitions; Metals;

相似文献

外文文献
中文文献

1. ER-DOPING EFFECTS ON PROPERTIES OF AMORPHOUS SILICON FILMS PREPARED BY ELECTRON BEAM EVAPORATIONS [J] . Gan RJ., Wang JZ. Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films . 1997,第2期

机译：ER-DOPING EFFECTS ON PROPERTIES OF AMORPHOUS SILICON FILMS PREPARED BY ELECTRON BEAM EVAPORATIONS
2. Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells [J] . H. Kobayashi, T. Ishida, K. NakamuraY. NakatoH. Tsubomura journal of applied physics . 1992,第11期

机译：Properties of indium tin oxide films prepared by the electron beam evaporation method in relation to characteristics of indium tin oxide/silicon oxide/silicon junction solar cells
3. Optical and electrical properties of La2O3 films prepared by ion beam assistant electron beam evaporation [J] . Yang C, Fan HQ, Qiu SJXi YXFu YF Surface review and letters . 2008,第3期

机译：Optical and electrical properties of La2O3 films prepared by ion beam assistant electron beam evaporation
4. Thickness dependence and doping effect on transport properties of post-hydrogenated amorphous silicon films prepared by vacuum evaporation. [O] . 1988

机译：Thickness dependence and doping effect on transport properties of post-hydrogenated amorphous silicon films prepared by vacuum evaporation.

Gd-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

摘要

著录项

相似文献

相关主题

期刊订阅