Stress evolution in passivated thin films of Cu on silica substrates

Shen YL.; He MY.; Bagchi A.Kienzle O.Ruhle M.Evans AG.Suresh S.

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Stress evolution in passivated thin films of Cu on silica substrates

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Stresses supported by thin films of Cu passivated by SiOx, have been measured upon thermal cycling. Very high stresses have been found, approaching 1 GPa in the thinnest (40 nm) films. Strengthening beyond yield occurs upon both cooling and healing, indicative of strong strain hardening in the Cu. The hardening continues down to at least 77 K. The yielding behavior of the Cu films has been characterized by a kinematic constitutive law, with exceptional strain hardening and a conventional temperature-dependent yield strength. The physical basis for this behavior is ascribed to confined shear bands in the Cu that induce large back stress. Transmission electron microscopy reveals aligned dislocations, which seemingly dictate the inelastic deformations in the shear bands. References: 34

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来源
《Journal of Materials Research》 |1998年第7期|1928-1937|共10页
作者
Shen YL.; He MY.; Bagchi A.Kienzle O.Ruhle M.Evans AG.Suresh S.;
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作者单位

Univ New Mexico, Dept Mech Engn, Albuquerque, NM 87131, USA, .;

atkelco.com;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类工程材料学;
关键词
Grain-growth; Copper-films; Mechanical-properties; Relaxation; Strain; Multilayers; Layer;

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Stress evolution in passivated thin films of Cu on silica substrates

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