Micro-electronic devices analysis by high resolution transmission electron microscopy

E. Gautier; V. Dashtizadeh; T. Epicier

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Micro-electronic devices analysis by high resolution transmission electron microscopy

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During the last 5 years, the semi-conductor industry has enhanced device performances by scaling down the feature sizes and by introduction of new technologies. Transmission electron microscopy with high resolution images (HREM) has become an indispensable tool for analyzing devices structure at nanoscale, for failures analysis, defects review and manufacture controlling. In parallel to this progress on the devices, the sample preparation techniques for MET compatible with the requirements of the industrial world were developed and open new prospects. In this paper, we present these techniques of sample preparation. Then we show examples in what high resolution images make it possible to answer industrial problems.

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《Revue de Metallurgie: Cahiers d'Informations Techniques》 |2003年第5期|477-494|共18页
作者
E. Gautier; V. Dashtizadeh; T. Epicier;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng;;fre
中图分类冶金工业;
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5. Future Electron Devices (FED) Journal, Vol. 10, Supplement 2, 1999 [R] . Sugano, T. 2001

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Micro-electronic devices analysis by high resolution transmission electron microscopy

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