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Characteristics of copper films produced via atomic layer deposition

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摘要

Properties of copper films produced using atomic layer deposition (ALD) were characterized. Composition, morphology, and electrical properties of these films grown on glass, as well as Ta, TiN, and TaN on silicon wafers were examined. The resistivity of films thicker than about 60 nm was near bulk value. Films were deposited using a two-step ALD process in which copper(II)-1,1,1,5,5,5,-hexafluoroacetylacetonate hydrate and water vapor were introduced in the first step and a reducing agent was introduced in a subsequent step. Five reducing agents were evaluated, with the best results obtained using isopropanol or formalin. The optimum deposition temperature with isopropanol was about 260 deg C, whereas it was about 300 deg C with formalin. These films were also investigated as seed layers for electrodeposition of thicker Cu layers for possible interconnect applications. Excellent fills in high aspect ratio trenches were demonstrated.

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  • 来源
    《Journal of Materials Research》 |2002年第9期|2394-2398|共5页
  • 作者

    Jinshan Huo; Raj Solanki; James McAndrew;

  • 作者单位

    Department of Electrical and Computer Engineering, OGI School of Science and Engineering at OHSU, Beaverton, Oregon 97006;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 工程材料学;
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