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Low Frequency Noise Analysis of Single Gate Extended Source Tunnel FET

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This paper presents the analysis of noise in Single Gate Extended Source TFET (SG-ESTFET) considering the absence and presence of interface trap charges, when the device is subjected to scaling and variation of parameters like device gate length (L-g), extended source length and height, SiGe mole fraction (x), oxide thickness (t(ox)), gate dielectric material, and frequency (f). Furthermore, the influence of variation of dimensionality and material parameters in presence of noise on Drain Current Noise Power Spectral Density (S-id) and Gate Voltage Electron Noise Power Spectral Density (S(vg)ee) are studied for different trap charge conditions. Assuming Gaussian distribution of trap charges at the interface, it is perceived that the effect of noise is more as compared to the case of absence of trap charges. In reference to other FET devices, present paper reports that, the proposed SG-ESTFET device under absence of trap charges, illustrates an improved S(id)and S(vg)ee value of 1.4 x 10(-29)A(2)/Hz and 5.21 x 10(-16) V-2/Hz, respectively whereas under the presence of trap charges, S(id)and S(vg)ee value are 6.6 x 10(-26)A(2)/Hz and 8.74 x 10(-12) V-2/Hz, respectively. Moreover, this study also reports that the generation recombination (G-R) noise is mainly prevailing at low and mid-frequencies in presence of trap charges while diffusion noise is prevailing at high-frequencies. Likewise, the flicker noise is observed to be noteworthy at low and medium-frequencies in absence of trap charges.

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