Optical Properties of Silicon Nano-Structures: Metal Assisted Chemical Etching and a Two-Stage Ion Implantation

Sahu Gayatri; Okram Gunadhor S.

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Optical Properties of Silicon Nano-Structures: Metal Assisted Chemical Etching and a Two-Stage Ion Implantation

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Two different methods of dual metal ion implantation technique and metal-assisted chemical etching are used to fabricate silicon nanostructures. Raman scattering and photoluminescence techniques have been employed to study the optical properties of formed Si nanostructures. Scanning Electron Microscopy images indicate the change in the surface morphology of Si nanowires with respect to the etching time. Dual ion implantation sample and metal-assisted chemical etching, prepared for 45 min exhibit similar optical properties. With a possible mechanism of their formation at room temperature, synthesizability of Si NWs in large scale for commercial purposes is discussed. It is expected that these Si NWs have got potential applications in optoelectronics, photonics and sensors.

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来源
《Silicon》 |2021年第11期|3865-3870|共6页
作者
Sahu Gayatri; Okram Gunadhor S.;
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作者单位

UGC DAE Ctr Sci Res Indore, Univ Campus,Khandwa Rd, Indore 452001, Madhya Pradesh, India;

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原文格式 PDF
正文语种英语
中图分类无机化学;
关键词
Silicon nanostructures; Ion implantation; Metal assisted chemical etching; Raman scattering; Photoluminescence;

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Optical Properties of Silicon Nano-Structures: Metal Assisted Chemical Etching and a Two-Stage Ion Implantation

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