Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

Ambacher O.; Christian B.; Yassine M.Baeumler M.Leone S.Quay R.

首页> 外文期刊>Journal of Applied Physics >Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

【24h】

Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

机译：

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The piezoelectric and spontaneous polarization of wurtzite ScxAl1-xN, GaxAl1-xN, and InxAl1-xN ternary compounds dramatically affects the electrical properties of pseudomorphic MexAl1-xN/GaN, MexAl1-xN/AlN, and MexAl1-xN/InN heterostructures and devices (Me: = Sc, Ga, In), due to bound interface charges caused by gradients in polarization at surfaces and heterointerfaces. We have calculated the piezoelectric and spontaneous polarization of undoped, metal polar ScxAl1-xN barrier layers (0 <= x <= 0.5) pseudomorphically grown on InN, GaN, and AlN buffer layers, in order to compare the polarization induced surface and interface charges determined to the ones predicted and measured in heterostructures with GaxAl1-xN and InxAl1-xN barriers (0 <= x <= 1.0). To facilitate the inclusion of the predicted polarization in future simulations, we give explicit prescriptions to calculate polarization induced bound interface charges for arbitrary x and barrier thicknesses up to 50 nm in each of the ternary III-N alloy heterostructures. In addition, we predict the electron sheet charges confined in heterostructures with positive polarization induced interface charges taking limitations for the epitaxial growth by strain and critical barrier thicknesses into account. Based on these results, we provide a detailed comparison of the sheet resistances and current-carrying capabilities of the heterostructures investigated, pointing to a superior potential of ScAlN/GaN based heterostructures for processing improved high electron mobility transistors for high-frequency and power electronic applications.

著录项

来源
《Journal of Applied Physics》 |2021年第20期|204501-1-204501-15|共15页
作者
Ambacher O.; Christian B.; Yassine M.Baeumler M.Leone S.Quay R.;
展开▼
作者单位

Albert Ludwigs Univ Freiburg, Inst Sustainable Syst Engn INATECH, Emmy Noether Str 2, D-79110 Freiburg, Germany;

Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种英语
中图分类应用物理学;
关键词

相似文献

外文文献
中文文献
专利

1. Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the A1N Interlayer Thickness [J] . Masanobu HIROKI, Narihiko MAEDA, Naoteru SHIGEKAWA IEICE transactions on electronics . 2010,第5期

机译：Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the A1N Interlayer Thickness
2. N-face GaN/AlN/GaN/InAlN and GaN/AlN/AlGaN/GaN/InAlN high-electron-mobility transistor structures grown by plasma-assisted molecular beam epitaxy on vicinal substrates [J] . Ahmadi Elaheh, Wu Feng, Li Haoran, Semiconductor science and technology . 2015,第5期

机译：N面GaN / AlN / GaN / InAlN和GaN / AlN / AlGaN / GaN / InAlN高电子迁移率晶体管结构，通过等离子体辅助分子束外延在邻近衬底上生长
3. Polarization charges and polarization-induced barriers in Al_(x)Ga_(1-x)N/GaN and In_(y)Ga_(1-y)N/GaN heterostructures [J] . L. Jia, E. T. Yu, D. KeoghP. M. AsbeckP. MiragliaA. RoskowskiR. F. Davis Applied physics letters . 2001,第18期

机译：Polarization charges and polarization-induced barriers in Al_(x)Ga_(1-x)N/GaN and In_(y)Ga_(1-y)N/GaN heterostructures
4. Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications [C] . Ritam Dutta, Tenzing Tamang, Pranoy Paul, International Conference on Trends in Electronics and Informatics . 2020

机译：基于Silvaco的AlGaN / GaN，InAlN / GaN和AlGaAs / GaAs基高电子迁移率晶体管在高频应用中的比较研究
5. Study of CMOS compatible ruthenium oxide Schottky contacts for AlGaN/GaN and InAlN/GaN diodes and high mobility transistors grown on silicon (111) substrates. [D] . Kyaw, Lwin Min. 2015

机译：用于AlGaN / GaN和InAlN / GaN二极管以及在硅（111）衬底上生长的高迁移率晶体管的CMOS兼容氧化钌肖特基接触的研究。
6. Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier [O] . Lei Guo, Xuelin Yang, Anqi Hu, -1

机译：具有超薄势垒的InAlN / GaN异质结构中高电场下热电子诱导的不饱和电流行为
7. Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier [O] . Lei Guo, Xuelin Yang, Anqi Hu, 2016

机译：Hot Electron诱导的高电场诱导的非饱和电流行为，在具有超薄屏障中的Inaln / GaN异质结构中的高电场
8. Plasma chemistries for dry etching GaN, AlN, InGaN and InAlN [R] . Pearton, S. J. , Vartuli, C. B. , Lee, J. W. , 1996

机译：用于干蚀刻GaN，alN，InGaN和InalN的等离子体化学物质

Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures

摘要

著录项

相似文献

相关主题

期刊订阅