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Conductivity of single Mo_6S_(9-x)I_x molecular nanowire bundles

机译：单Mo_6S_（9-x）I_x分子纳米线束的电导率

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摘要

Longitudinal resistivity measurements on single Mo_6S_(9-x)I_x (x = 4.5, 6 and 7) molecular nanowire bundles ranging in diameter from d = 7 nm to 1 mu m are performed to investigate the longitudinal transport properties of individual bundles. Different contacting methods are used to study diverse nanocircuit manufacturing technologies that can be used for interconnects based on Mo_6S_(9-x)I_x. The measurements show ubiquitously linear I-V characteristics with Pd, Au, Ag and Ti contact metals. The highest room-temperature conductivity achieved is SIGMA_0 approx 10 S m~(-1) using Ag contacts. The critical current densities typically achieved are J_c approx 10~4 A cm~(-1). The observed metallic behaviour at room temperature is consistent with the band structure calculated using density functional theory (DFT). At low temperatures, the conductivity is found to decrease, following variable range hopping (VRH) behaviour of the form sigma = SIGMA_0 exp -(T_0/T)~(beta) reasonably well, but the exponent beta changes upon annealing. From fits to the temperature dependence of the conductivity, a change from beta approx 1/4 to berta approx 1/2 is observed, which may be explained by a change in dimensionality from 3D-like VRH to ID-like VRH following the removal of intra-bundle interstitial iodine.
机译：对单个Mo_6S_（9-x）I_x（x = 4.5、6和7）直径在d = 7 nm至1μm范围内的分子纳米线束进行纵向电阻率测量，以研究各个束的纵向传输特性。使用不同的接触方法来研究各种纳米电路制造技术，这些技术可用于基于Mo_6S_（9-x）I_x的互连。测量结果显示，Pd，Au，Ag和Ti接触金属普遍具有线性I-V特性。使用银触点可获得的最高室温电导率为SIGMA_0约10 S m〜（-1）。通常达到的临界电流密度为J_c约10〜4 A cm〜（-1）。在室温下观察到的金属行为与使用密度泛函理论（DFT）计算的能带结构一致。在低温下，发现电导率随σσ= SIGMA_0 exp-（T_0 / T）〜β形式的可变范围跳变（VRH）行为而适当降低，但指数β随退火而变化。从拟合到电导率的温度依赖性，观察到从β约1/4到berta约1/2的变化，这可以用去除3D形VRH到ID形VRH的尺寸变化来解释。束内间隙碘。

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